Keysight Technologies, Inc. has collaborated with the University of Glasgow, the National Physical Laboratory (NPL), and MPI Corporation to develop a new approach to broadband characterization of next-generation sub-terahertz (sub-THz) semiconductor devices.
Together, the organizations demonstrated continuous on-wafer characterization of indium phosphide high-electron-mobility transistors (InP HEMTs) from near DC to 250 GHz in a single sweep, simplifying broadband measurements for advanced semiconductor research and design.
As semiconductor technologies move into millimeter-wave and sub-terahertz frequencies for next-generation applications, engineers need to accurately characterize transistor performance across increasingly broad frequency ranges. Conventional approaches can require multiple measurement setups and calibrations, adding complexity and making it more difficult to obtain consistent data for broadband device modeling.
The four organizations combined Keysight instrumentation, University of Glasgow semiconductor devices, MPI Corporation on-wafer probing technology, and NPL metrology expertise to create the broadband measurement solution. The setup brought together:
Keysight’s PNA-X Vector Network Analyzer
Keysight’s Single-Sweep 250 GHz Frequency Extender
Keysight’s Precision Source/Measure Unit (SMU)
University of Glasgow’s InP HEMT devices and on-wafer calibration standards
MPI Corporation’s broadband on-wafer probing technology and calibration software
NPL’s high-frequency metrology and calibration methodologies
Together, these technologies enabled continuous measurement from near DC to 250 GHz with a single probe touchdown, eliminating the need for multiple setup changes and providing consistent broadband S-parameter measurements. Built-in source filtering and broadband source power calibration also helped ensure signal purity of the applied millimeter-wave signal at the probe-tip.
Thierry Locquette, VP of Sales, Europe, Middle East & Africa at Keysight said: “Characterizing devices continuously from near DC to 250 GHz in a single sweep can significantly simplify the measurement process for researchers developing next-generation semiconductor technologies. By bringing together expertise in instrumentation, devices, probing, and metrology, this collaboration demonstrates a practical approach to generating the consistent broadband data engineers need to accelerate device development.”
Dr Xiaobang Shang, Principal Scientist and On-wafer Measurement Lead at NPL, said: “Accurate on-wafer measurement is essential for developing reliable semiconductor devices, particularly as technologies move further into the millimetre-wave and sub-terahertz frequency ranges. We were pleased to contribute NPL’s high-frequency on-wafer metrology and calibration expertise to this collaboration, helping demonstrate a practical route to consistent broadband device measurements using the state-of-the-art single sweep system.”
Matthew White, Director of Business Development at MPI Corporation, said: “Extending on-wafer characterization to 250 GHz requires the probing, calibration, and measurement platform operating as one seamlessly integrated system. This collaboration demonstrates a practical approach to achieving consistent broadband measurements from near DC to 250 GHz with a single probe touchdown, helping researchers simplify characterization and accelerate device development with great confidence.”
